GTA has been focusing on the development of IGBT process technology for a long time and has accumulated rich experience in technology development and massive production. Now we have successfully developed Planar NPT IGBT, Planar FS IGBT and 600~1700V Trench FS IGBT. The products are widely used in HEV/EV, photovoltaic inverter, converter, welding, smart grid, locomotive traction, etc.

GTA has decades of experience in Power MOSFET process platform developing and manufacturing. We have already set up various MOSFET platforms including planar VDMOS, Trench MOSFET, Split-gate Trench (SGT) MOSFET, Super-Junction MOSFET, etc.

SGT(Split-gate Trench) MOSFET is a new trench MOSFET which adopted a newly designed split-gate/Trench architecture with charge-balance performance. SGT technology is able to lower down the device Rdson and Miller Capacitance significantly, i.e. FOM. Comparing with traditional Trench MOSFET, SGT has much better switching and efficiency performance. It is widely used in UPS, BMS, Motor Driver, Server, etc.

GTA  has been accumulating rich experience in 150mm/200mm TVS（Transient Voltage Suppresser）research and massive production. The featured EPI & upgraded BEOL CMOS process has helped to fabricate ultra-low capacitance & low clamp voltage TVS products. The products have entered the world-class 3C product supply chain. GTA has the ability to customize both planar and trench process.

GTA has successfully developed FRD platform based on epitaxial and diffusion process technology, provides electron irradiation technology for minority carrier lifetime control. Mature platforms 650V/750V/1200V are now under massive production.

GTA has more than ten years of experience in the MEMS manufacturing, and has developed various key and mature processes such as thick epitaxy, deep trench isolation and double-side lithography. GTA has capabilities to develop and mass-produce optical sensor, flow sensor, pressure sensor, etc.