鸿运国际官网

This site uses cookies. By continuing to browse the site you are agreeing to our use of cookies. For more details about cookies and how to manage them see 《Legal Notice》

  • banner-web-tech-767.jpg banner-mob-tech-671.jpg

    Technology Platform

Discrete Devices Platform

功率器件.png

  • IGBT

  • MOSFET

  • TVS

  • FRD

  • SIC

  • MEMS

  • GTA has been focusing on the development of IGBT process technology for a long time and has accumulated rich experience in technology development and massive production. Now we have successfully developed Planar NPT IGBT, Planar FS IGBT and 600~1700V Trench FS IGBT. The products are widely used in HEV/EV, photovoltaic inverter, converter, welding, smart grid, locomotive traction, etc.


    003-Discrete-IGBT.png

       

  • GTA has decades of experience in Power MOSFET process platform developing and manufacturing. We have already set up various MOSFET platforms including planar VDMOS, Trench MOSFET, Split-gate Trench (SGT) MOSFET, Super-Junction MOSFET, etc.


    SGT(Split-gate Trench) MOSFET is a new trench MOSFET which adopted a newly designed split-gate/Trench architecture with charge-balance performance. SGT technology is able to lower down the device Rdson and Miller Capacitance significantly, i.e. FOM. Comparing with traditional Trench MOSFET, SGT has much better switching and efficiency performance. It is widely used in UPS, BMS, Motor Driver, Server, etc.


    MOSFET.png

  • GTA  has been accumulating rich experience in 150mm/200mm TVS(Transient Voltage Suppresser)research and massive production. The featured EPI & upgraded BEOL CMOS process has helped to fabricate ultra-low capacitance & low clamp voltage TVS products. The products have entered the world-class 3C product supply chain. GTA has the ability to customize both planar and trench process.


    005-Discrete-TVS.png

  • GTA has successfully developed FRD platform based on epitaxial and diffusion process technology, provides electron irradiation technology for minority carrier lifetime control. Mature platforms 650V/750V/1200V are now under massive production.


    006-Discrete-FRD.png








  • SiC Power Device


    SiC material has the characteristics of high thermal conductivity and can normally operate in high temperature environment. SiC power devices have the advantages of high voltage resistance and high frequency operation. SIC power devices cannot only improve the system efficiency and power density, but also miniaturize the power electronic system and enhance the reliability. SiC material can possess higher reliability than other emerging materials, which is widely applied in the fields of industrial application, high-efficiency power system, servo power supply, electric vehicle, etc.

    1-.jpg

    PE
    Inverter

    2-.jpg

    Motor
    Control

    3-.jpg

    Smart
    Power Grid

    4-.jpg

    Ship&
    Vessels

    5-.jpg

    Windmills

    6-.jpg

    UPS

    7-.jpg

    xEV

    SiC device characteristics
    • SiC Schottky diode has high voltage resistance, high thermal conductivity and excellent reverse recovery ability. It can reduce power loss and improve system efficiency

    • SiC MOSFET can possess high-speed switching and low on-resistance, which are helpful for power electronics high-frequency applications to reduce the power loss and improve the whole system efficiency.


    SiC

    • D1_icon1.svg

      High Temperature Implant

    • D1_icon2.svg

      Metal Deposition

    • D1_icon3.svg

      High Temperature Anneal

    • D1_icon4.svg

      Laser Anneal

    • D1_icon5.svg

      Deep Trench SiC Etch

    • D1_icon6.svg

      SiC Gate Oxide

    • D1_icon7.svg

      SiC Wafer Thinning

    Roadmap

    weibiaoti-1.jpg
  • GTA has more than ten years of experience in the MEMS manufacturing, and has developed various key and mature processes such as thick epitaxy, deep trench isolation and double-side lithography. GTA has capabilities to develop and mass-produce optical sensor, flow sensor, pressure sensor, etc.


    007-Discrete-MEMS.jpg